The research group of Professor LI Quanjun from the State Key Laboratory of Superhard Materials at Jilin University (JLU) recently published an article in the Journal of the American Chemical Society.
The two primary authors are Doctors YUE Lei and LI Zonglun form the lab, while Professors LIU Bingbing and LI Quanjun are corresponding authors.
The article, Radical n−p Conduction Switching and Significant Photoconductivity Enhancement in NbOI2 via Pressure-Modulated Peierls Distortion, demonstrated the group’s efforts to achieve pressure-modulated radical n-p conduction switching and photoelectric properties enhancement in NbOI2 by utilizing high-pressure diamond anvil cell technology.
According to the article, the lack of intrinsic p-type two-dimensional layered semiconductors has hindered the development of 2D devices, especially in complementary metal–oxide–semiconductor devices and integrated circuits.
It is particularly important to search for materials that can achieve rapid switching of conductivity types in semiconductor-semiconductor phase transitions under pressure.
NbOI2 is a novel 2D van der Waals ferroelectric semiconductor that exhibits a Peierls distorted polar structure. By adjusting atomic positions and interactions, pressure can effectively regulate the structural deformation of NbOI2, causing various performance changes.
These findings highlight the potential of pressure engineering in flexibly and efficiently regulating photoelectric properties, providing important guidance for designing high-performance p-type 2D semiconductors.
